Electrical Engineering Material

The density of states related effective masses of electrons and holes in silicon are approximately $1.08,m_e$ and $0.56,m_e$ respectively. The electron and hole drift mobilities at room temperature are $1350$ and $450\ \mathrm{cm^2V^{-1}s^{-1}}$ respectively. Calculate intrinsic concentration and intrinsic resistivity of silicon. The energy band gap for silicon is $1.1\ \mathrm{eV}$.