Semiconductors

The density of states related effective masses of electrons and holes in silicon are approximately 1.08m_e and 0.6m_e respectively. The electron and hole drift mobilities at room temperature are 1350 and 450 cm²V⁻¹s⁻¹ respectively. Calculate intrinsic concentration and intrinsic resistivity of silicon at T = 300 K. The energy band gap for silicon is 1.1 eV.

Describe the phenomenon of generation of electrons and holes, and conduction in semiconductor. Also derive equation for conductivity.

Compute the intrinsic concentration and intrinsic resistivity of silicon at 27°C. Given that m_e* = 1.08m_e, μ_e = 1350 cm²/V.s, m_h* = 0.6m_e, μ_h = 450 cm²/V.s. Where m_e* and m_h* are effective masses of electron and holes respectively and μ_e and μ_h are electron and hole drift mobilities respectively. The band gap of silicon = 1.1 eV.